SI Sensors, a leader in advanced imaging technologies, has unveiled an innovative imaging solution that integrates Charge-Coupled Device (CCD) technology with Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. This groundbreaking approach, termed CCD-in-CMOS, redefines burst mode imaging by delivering unparalleled speed and sensitivity.

The technology behind CCD-in-CMOS

CCD-in-CMOS technology leverages the charge domain storage capabilities of CCD sensors with the system-on-chip efficiencies of CMOS architecture. By combining CCD memory with CMOS photodiodes and readout circuits, SI Sensors’ new image sensors enable ultra-high-speed capture without sacrificing image quality.

The result is a hybrid solution capable of achieving millions of frames per second at full resolution, ideal for applications demanding ultra-fast imaging such as high-speed video recording, hyperspectral imaging, and scientific research.

Key features of CCD-in-CMOS sensors

• Unmatched speed: Millions of frames per second with full resolution.
• Exceptional sensitivity: High signal-to-noise ratio for detailed imaging.
• Advanced integration: On-chip circuitry for reduced system complexity.
• Adaptability: Suitable for diverse imaging applications, including hyperspectral and high-speed analysis.

Phil Brown, General Manager of SI Sensors, expressed optimism about the technology's potential: “Our ability to create ultra-fast burst mode devices will revolutionize high-speed imaging, ensuring clear and detailed imaging of the fastest observable events.”

A breakthrough for high-speed imaging

With its CCD-in-CMOS technology, SI Sensors bridges the gap between performance and practicality, enabling faster, clearer imaging for cutting-edge applications.